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SMBJ110A-Q - Bourns

Description: SMBJ-Q Transient Voltage Suppressor Diode Series, Uni-Directional

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PCB Footprints
SMBJ110A-Q - Bourns PCB footprint - Diodes Moulded - Diodes Moulded - SMB (DO-214AA) *
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3D Models
SMBJ110A-Q - Bourns  - 3D model - Diodes Moulded - SMB (DO-214AA) *
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SMBJ110A-Q Details

  • Manufacturer Part Number:

    SMBJ110A-Q

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMB, 2 PIN

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Bourns Inc

  • YTEOL:

    6.96

  • Additional Feature:

    PRSM-MIN

  • Breakdown Voltage-Max:

    135 V

  • Breakdown Voltage-Min:

    122 V

  • Breakdown Voltage-Nom:

    128.5 V

  • Clamping Voltage-Max:

    177 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    AEC-Q101; UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    110 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    110 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SMBJ110A-Q Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal performance of the SMBJ110A-Q includes keeping the leads as short as possible, using a ground plane under the device, and minimizing the distance between the device and the protection circuitry. Additionally, it is recommended to use a via or a thermal pad to connect the device to the ground plane.
  • The SMBJ110A-Q is designed to handle high surge currents, with a peak pulse current rating of 110A. The device uses a proprietary silicon avalanche technology to absorb and divert surge currents away from the protected circuitry.
  • The response time of the SMBJ110A-Q to an ESD event is typically in the range of 1-2 nanoseconds. This fast response time helps to protect sensitive circuitry from damage caused by ESD events.
  • Yes, the SMBJ110A-Q is rated for operation up to 150°C, making it suitable for use in high-temperature applications. However, it is recommended to derate the device's performance at high temperatures to ensure reliable operation.
  • Yes, the SMBJ110A-Q is compatible with automotive applications and meets the requirements of ISO 7637-2, which specifies the test methods and requirements for electromagnetic compatibility (EMC) in vehicles.

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SMBJ110A-Q Overview

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