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SMBJ12A - Taiwan Semiconductor

Description: ESD Suppressors / TVS Diodes 600 Watt TVSs

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SMBJ12A - Taiwan Semiconductor PCB footprint - Diodes Moulded - Diodes Moulded - SMBJ12A
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SMBJ12A - Taiwan Semiconductor  - 3D model - Diodes Moulded - SMBJ12A
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SMBJ12A Details

  • Manufacturer Part Number:

    SMBJ12A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SMB, 2 PIN

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY

  • Breakdown Voltage-Max:

    14.7 V

  • Breakdown Voltage-Min:

    13.3 V

  • Breakdown Voltage-Nom:

    14 V

  • Clamping Voltage-Max:

    19.9 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    3.5 V

  • JEDEC-95 Code:

    DO-214AA

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    600 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    3 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    12 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    12 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SMBJ12A Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for the SMBJ12A can be found in the Taiwan Semiconductor's application note or in the IPC-7351 standard. A typical footprint would be a rectangular pad with a size of 1.3mm x 0.8mm, with a 0.5mm x 0.5mm thermal pad in the center.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines. Use a solder with a melting point below 220°C, and avoid excessive soldering temperatures or times. Inspect the solder joints for defects such as cold joints, solder balls, or bridging.
  • The SMBJ12A is rated for operation from -55°C to 150°C, but the maximum operating temperature range depends on the specific application and environmental conditions. Consult the datasheet and application notes for more information.
  • The power dissipation of the SMBJ12A can be calculated using the formula P = (Vrwm x Ir) / (1 - (Vrwm / Vbr)). The thermal resistance can be calculated using the formula RthJA = (Tj - Ta) / P, where Tj is the junction temperature, Ta is the ambient temperature, and P is the power dissipation.
  • The SMBJ12A is designed to provide ESD protection up to ±30kV according to the IEC 61000-4-2 standard. It can also withstand surge currents up to 100A according to the IEC 61000-4-5 standard.

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SMBJ12A Overview

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Part Image MXLSMBJ12AE3 Microchip Technology Inc

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

Part Image SMBJ12A-E3/5B Vishay Semiconductors

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Transient Suppressor

Part Image SMBJ12T1 Littelfuse Inc

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Part Image SMBJ12TR Microsemi Corporation (now Microchip)

600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

Part Image SMBJ12A Kuwait Semiconductor Co Ltd

Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, DO-214AA

For a full list of alternate parts for SMBJ12A, check out Findchips.com