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SPD50P03LGBTMA1 - Infineon

Description: MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P

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SPD50P03LGBTMA1 - Infineon PCB footprint - Other - Other - SPD50P03LGBTMA1-1
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SPD50P03LGBTMA1 - Infineon  - 3D model - Other - SPD50P03LGBTMA1-1
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SPD50P03LGBTMA1 Details

  • Manufacturer Part Number:

    SPD50P03LGBTMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-6

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    256 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SPD50P03LGBTMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD50P03LGBTMA1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The maximum current rating for the SPD50P03LGBTMA1 is 50A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
  • Yes, the SPD50P03LGBTMA1 is suitable for high-frequency switching applications, but it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize electromagnetic interference (EMI).
  • To protect the SPD50P03LGBTMA1 from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats, and ensuring that the device is properly grounded during assembly and testing.

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SPD50P03LGBTMA1 Overview

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Part Image SPD50P03LG Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252