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SPP80P06PHXKSA1 - Infineon

Description: Infineon SPP80P06PHXKSA1 P-channel MOSFET Transistor, 80 A, 60 V, 3+Tab-Pin PG-TO-220-3

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PCB Footprints
SPP80P06PHXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220-3
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3D Models
SPP80P06PHXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - TO220-3
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SPP80P06PHXKSA1 Details

  • Manufacturer Part Number:

    SPP80P06PHXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    823 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    91 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SPP80P06PHXKSA1 Frequently Asked Questions (FAQs)

  • For optimal performance, it's recommended to follow Infineon's application note AN2013-01-001e, which provides guidelines for PCB layout, thermal design, and heat sink attachment. Additionally, ensure a low-impedance source connection and a solid ground plane to minimize electromagnetic interference.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions and derating guidelines in the datasheet. Implement a robust thermal management system, including a heat sink and thermal interface material, to maintain a safe junction temperature (Tj) below 150°C.
  • To ensure EMI and EMC compliance, follow Infineon's guidelines for PCB layout, component placement, and shielding. Implement a common-mode choke, and consider using a filter or ferrite bead to reduce electromagnetic radiation. Ensure proper grounding and decoupling to minimize noise and interference.
  • Select a gate driver that matches the SPP80P06PHXKSA1's gate charge requirements. Ensure a low-impedance gate drive circuit with a short, wide trace to minimize inductance. Follow Infineon's application notes and reference designs for guidance on gate driver selection and layout.
  • Perform thorough testing and validation procedures, including electrical characterization, thermal testing, and reliability testing. Follow industry standards, such as AEC-Q101, and Infineon's recommended test procedures to ensure the device meets the required specifications and reliability standards.

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SPP80P06PHXKSA1 Overview

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