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SPW21N50C3 - Infineon

Description: Infineon SPW21N50C3 N-channel MOSFET Transistor, 21 A, 560 V, 3-Pin TO-247

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SPW21N50C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO-247-3-1
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3D Models
SPW21N50C3 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO-247-3-1
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SPW21N50C3 Details

  • Manufacturer Part Number:

    SPW21N50C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    63 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPW21N50C3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the SPW21N50C3 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the SPW21N50C3 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the SPW21N50C3 is suitable for high-reliability applications. Infineon Technologies AG follows a rigorous quality control process, and the device is manufactured using a robust and reliable process. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device operates within its specified parameters.
  • To protect the SPW21N50C3 from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure the workspace is ESD-protected, and use ESD-protected packaging and storage materials. Avoid touching the device's pins or leads, and use a grounded tip soldering iron when assembling the device.

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SPW21N50C3 Overview

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Part Image SPW21N50C3FKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC