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SPW24N60C3 - Infineon

Description: Infineon SPW24N60C3 N-channel MOSFET Transistor, 24.3 A, 650 V, 3-Pin TO-247

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PCB Footprints
SPW24N60C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - pg-to-247
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3D Models
SPW24N60C3 - Infineon  - 3D model - Transistor Outline, Vertical - pg-to-247
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SPW24N60C3 Details

  • Manufacturer Part Number:

    SPW24N60C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    780 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    24.3 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    72.9 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SPW24N60C3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the SPW24N60C3 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the SPW24N60C3 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the SPW24N60C3 is suitable for high-reliability applications. Infineon Technologies AG has qualified the device according to the AEC-Q101 standard, which ensures the device meets the stringent requirements for automotive and industrial applications.
  • To protect the SPW24N60C3 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, consider using a TVS (Transient Voltage Suppressor) diode to protect the device from voltage transients and spikes.

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SPW24N60C3 Overview

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Part Image IPW60R160P6 Infineon Technologies AG

Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247