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SPW32N50C3 - Infineon

Description: Infineon SPW32N50C3 N-channel MOSFET Transistor, 32 A, 560 V, 3-Pin TO-247

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SPW32N50C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SPW32N50C3*
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SPW32N50C3 - Infineon  - 3D model - Transistor Outline, Vertical - SPW32N50C3*
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SPW32N50C3 Details

  • Manufacturer Part Number:

    SPW32N50C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AA

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.95

  • Additional Feature:

    AVALANCHE RATED, HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    1100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    284 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SPW32N50C3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the SPW32N50C3 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the SPW32N50C3 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the SPW32N50C3 is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the SPW32N50C3 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, ensure the device is operated within its specified voltage and current ratings, and consider using a fuse or circuit breaker to prevent damage from excessive current.

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SPW32N50C3 Overview

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Part Image SPW32N50C3FKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 32A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA