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SQ2325CES-T1_GE3 - Vishay

Description: MOSFETs P-CHANNEL 150-V,840mA (D-S) 175C MOSFET Surface Mount -55 to +175 °C

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SQ2325CES-T1_GE3 - Vishay PCB footprint - Other - Other - SOT-23 (TO-236)
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SQ2325CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2325CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1.12 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    0.84 A

  • Drain-source On Resistance-Max:

    1.77 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    2 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    34 ns

  • Turn-on Time-Max (ton):

    30 ns

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SQ2325CES-T1_GE3 Overview

Use the download button to access the SQ2325CES-T1_GE3 schematic symbol and PCB footprint.
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