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SQ2348ES-T1_BE3 - Vishay

Description: MOSFET N-CHANNEL 30V (D-S)

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PCB Footprints
SQ2348ES-T1_BE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - -SOT-23
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3D Models
SQ2348ES-T1_BE3 - Vishay  - 3D model - SOT23 (3-Pin) - -SOT-23
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SQ2348ES-T1_BE3 Details

  • Manufacturer Part Number:

    SQ2348ES-T1_BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    12 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    41 ns

  • Turn-on Time-Max (ton):

    19 ns

SQ2348ES-T1_BE3 Frequently Asked Questions (FAQs)

  • Store in a dry, cool place, away from direct sunlight, and avoid exposure to moisture, extreme temperatures, and mechanical stress.
  • Use an ESD wrist strap, mat, or workstation, and handle the component by the body or leads, avoiding direct contact with the pins.
  • Use a soldering profile with a peak temperature of 240°C (464°F) for 3-5 seconds, and ensure the component is not exposed to temperatures above 260°C (500°F) for more than 10 seconds.
  • Yes, but ensure the component is properly secured to the PCB using a suitable adhesive or mechanical fastening method to prevent vibration-induced failure.
  • Use a soft-bristled brush and a mild detergent solution, avoiding harsh chemicals, ultrasonic cleaning, or high-pressure washing, which can damage the component or PCB.

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SQ2348ES-T1_BE3 Overview

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Part Image SQ2348CES-T1_BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SQ2348CES-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Image SQ2348ES-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB