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SQ3426CEV-T1_GE3 - Vishay

Description: VISHAY - SQ3426CEV-T1_GE3 - Power MOSFET, N Channel, 60 V, 7 A, 0.034 ohm, TSOP, Surface Mount

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Symbol
SQ3426CEV-T1_GE3 - Vishay - PCB symbol
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PCB Footprints
SQ3426CEV-T1_GE3 - Vishay PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOP 6 LEAD
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3D Models
SQ3426CEV-T1_GE3 - Vishay - 3D model - SOT23 (6-Pin) - TSOP 6 LEAD
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SQ3426CEV-T1_GE3 Details

  • Manufacturer Part Number:

    SQ3426CEV-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSOP-6

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    29 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    32 ns

SQ3426CEV-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ3426CEV-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a pad size of 1.5 mm x 0.8 mm, and a spacing of 0.5 mm between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using thermal vias, thermal pads, or a heat sink. Keep the ambient temperature below 125°C and avoid overheating, as it can reduce the device's lifespan.
  • The maximum allowed voltage for SQ3426CEV-T1_GE3 is 30 V, as specified in the datasheet. Exceeding this voltage can damage the device.
  • Yes, SQ3426CEV-T1_GE3 is suitable for high-frequency applications up to 1 GHz. However, ensure proper PCB layout and decoupling to minimize parasitic effects and signal loss.
  • Select a resistor value that ensures the desired bias voltage and current for your application. A general rule of thumb is to choose a resistor value that limits the current to 10-20 mA. Consult the datasheet and application notes for more information.

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SQ3426CEV-T1_GE3 Overview

Use the download button to access the SQ3426CEV-T1_GE3 schematic symbol, PCB footprint, and 3D model.
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