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SQD45P03-12_GE3 - Vishay

Description: MOSFET 30V 50A 71W AEC-Q101 Qualified

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SQD45P03-12_GE3 - Vishay PCB footprint - Other - Other - SQD45P03-12_GE3-1
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3D Models
SQD45P03-12_GE3 - Vishay  - 3D model - Other - SQD45P03-12_GE3-1
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SQD45P03-12_GE3 Details

  • Manufacturer Part Number:

    SQD45P03-12_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

SQD45P03-12_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQD45P03-12_GE3 is a rectangle with dimensions of 4.5mm x 2.7mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult the manufacturer's application notes for specific guidance.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink. Proper PCB design, component selection, and thermal management are also essential for reliable operation.
  • The maximum allowed voltage transient for SQD45P03-12_GE3 is not explicitly stated in the datasheet. However, as a general guideline, it's recommended to limit voltage transients to 10% of the maximum rated voltage to ensure device reliability. Consult with the manufacturer or a qualified engineer for specific guidance.
  • While SQD45P03-12_GE3 is a high-speed device, its suitability for high-frequency switching applications depends on the specific requirements. The device's switching characteristics, such as rise and fall times, should be evaluated against the application's requirements. Consult the datasheet and application notes for guidance, and consider simulation or prototyping to validate the design.
  • To prevent electrostatic discharge (ESD) damage, follow standard ESD protection procedures during manufacturing and handling. This includes using ESD-safe materials, grounding personnel, and using ESD-protective packaging. Consult the manufacturer's guidelines and industry standards (e.g., ANSI/ESD S20.20) for specific recommendations.

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SQD45P03-12_GE3 Overview

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