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SQJ454EP - Vishay

Description: Power MOSFET, N Channel, 200 V, 13 A, 0.118 ohm, PowerPAK SO, Surface Mount

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SQJ454EP - Vishay PCB footprint - Other - Other - SQJ454EP-2
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SQJ454EP Details

  • Manufacturer Part Number:

    SQJ454EP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    35 ns

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SQJ454EP Overview

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Part Image SQJ454EP-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 13A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET