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SQJA88EP-T1_GE3 - Vishay

Description: MOSFET N Channel 40V AEC-Q101 Qualified

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PCB Footprints
SQJA88EP-T1_GE3 - Vishay PCB footprint - Other - Other - SQJA88EP-T1_GE3-2
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3D Models
SQJA88EP-T1_GE3 - Vishay  - 3D model - Other - SQJA88EP-T1_GE3-2
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SQJA88EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJA88EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    POWERPAK SO-8L

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Date Of Intro:

    2020-05-20

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    33.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    55 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    30 ns

SQJA88EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJA88EP-T1_GE3 is a rectangle with dimensions of 2.5 mm x 1.6 mm, with a 0.5 mm radius corner and a 0.3 mm pad spacing. It's essential to follow the recommended footprint to ensure proper soldering and thermal performance.
  • To handle thermal management, ensure a good thermal connection between the device and the PCB. Use a thermal pad or a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage for the SQJA88EP-T1_GE3 is 100 V. Exceeding this voltage may damage the device or affect its reliability. Ensure that the voltage rating is not exceeded during operation, including any voltage spikes or transients.
  • Yes, the SQJA88EP-T1_GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance, as well as the PCB layout and design, to minimize signal degradation and ensure optimal performance.
  • To ensure reliability in high-temperature environments, follow the recommended operating temperature range of -55°C to 150°C. Also, consider using a derating factor to reduce the maximum allowed voltage and current ratings. Additionally, ensure proper thermal management and consider using a thermal protection device to prevent overheating.

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SQJA88EP-T1_GE3 Overview

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