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SQJQ904E-T1_GE3 - Vishay

Description: MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified

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SQJQ904E-T1_GE3 Details

  • Manufacturer Part Number:

    SQJQ904E-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.0034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SQJQ904E-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJQ904E-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.25 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for the SQJQ904E-T1_GE3 is 80% of the maximum rated voltage, which is 900 V. Therefore, the derated voltage should not exceed 720 V.
  • Yes, the SQJQ904E-T1_GE3 is suitable for high-frequency applications up to 100 kHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within its specified ratings. Also, consider using a redundant design, and perform thorough testing and validation of the device in the application.

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SQJQ904E-T1_GE3 Overview

Use the download button to access the SQJQ904E-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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