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SQM120N04-1m7_GE3 - Vishay

Description: MOSFET 40V 120A 375W AEC-Q101 Qualified

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SQM120N04-1m7_GE3 - Vishay - PCB symbol
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PCB Footprints
SQM120N04-1m7_GE3 - Vishay PCB footprint - Other - Other - D2PAK: 3-Lead
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3D Models
SQM120N04-1m7_GE3 - Vishay - 3D model - Other - D2PAK: 3-Lead
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SQM120N04-1m7_GE3 Details

  • Manufacturer Part Number:

    SQM120N04-1M7_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    361 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SQM120N04-1m7_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQM120N04-1M7_GE3 is a 5x6 mm pad with a 3.5 mm x 3.5 mm thermal pad in the center, with a solder mask defined pad (SMDP) and a non-solder mask defined (NSMD) thermal pad.
  • To ensure reliable soldering, use a soldering iron with a temperature of 260°C to 280°C, and a solder with a melting point of 217°C to 220°C. Apply a small amount of solder paste to the PCB pad, and use a reflow oven or a hot air soldering station to solder the component.
  • The maximum allowed voltage derating for SQM120N04-1M7_GE3 is 80% of the maximum rated voltage, which is 120V. Therefore, the maximum allowed voltage derating is 96V.
  • The power dissipation of SQM120N04-1M7_GE3 can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-to-source voltage, Ids is the drain-to-source current, Vgs is the gate-to-source voltage, and Igs is the gate-to-source current.
  • The thermal resistance of SQM120N04-1M7_GE3 is RthJA = 40°C/W (junction-to-ambient) and RthJC = 2.5°C/W (junction-to-case).

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SQM120N04-1m7_GE3 Overview

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