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SQM120N10-09_GE3 - Vishay

Description: MOSFET N-CH 100V 120A TO263

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SQM120N10-09_GE3 - Vishay PCB footprint - Other - Other - TO-263 (D2PAK)_5.08 H
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SQM120N10-09_GE3 Details

  • Manufacturer Part Number:

    SQM120N10-09_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    266 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SQM120N10-09_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQM120N10-09_GE3 is a TO-247-3L package with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow Vishay's guidelines for thermal management, including proper heat sinking, thermal interface materials, and derating the device's power dissipation according to the ambient temperature.
  • Yes, SQM120N10-09_GE3 can be used in switching applications, but it is essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • The maximum allowed voltage slew rate for SQM120N10-09_GE3 is 10V/ns, exceeding which may cause the device to malfunction or fail.
  • To protect SQM120N10-09_GE3 from ESD, it is recommended to follow standard ESD handling procedures, including using ESD-safe workstations, wrist straps, and packaging materials, and ensuring that the device is properly grounded during handling and assembly.

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SQM120N10-09_GE3 Overview

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