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SQRS152ELP-T1_GE3 - Vishay

Description: MOSFETs Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8SW, 5 mohm a. 10V, 7.5 mohm a. 4.5V

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PCB Footprints
SQRS152ELP-T1_GE3 - Vishay PCB footprint - Other - Other - SQRS152ELPPowerPAK® SO-8SW -T1_GE3
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3D Models
SQRS152ELP-T1_GE3 - Vishay  - 3D model - Other - SQRS152ELPPowerPAK® SO-8SW -T1_GE3
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SQRS152ELP-T1_GE3 Details

  • Manufacturer Part Number:

    SQRS152ELP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8SW, 8 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    9.8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    80 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    166 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    47 ns

  • Turn-on Time-Max (ton):

    19.6 ns

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SQRS152ELP-T1_GE3 Overview

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