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SSM6K810R - Toshiba

Description: N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, TSOP6F

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PCB Footprints
SSM6K810R - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-3AC1A-4
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3D Models
SSM6K810R - Toshiba  - 3D model - SO Transistor Flat Lead - 2-3AC1A-4
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SSM6K810R Details

  • Manufacturer Part Number:

    SSM6K810R

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSOP6F, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Date Of Intro:

    2018-12-26

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    21.4 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.069 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM6K810R Overview

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