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STB160N75F3 - STMicroelectronics

Description: N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK - STripFET™ Power MOSFET

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STB160N75F3 - STMicroelectronics - PCB symbol
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STB160N75F3 - STMicroelectronics PCB footprint - Other - Other - D2PAK_2020
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STB160N75F3 - STMicroelectronics - 3D model - Other - D2PAK_2020
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STB160N75F3 Details

  • Manufacturer Part Number:

    STB160N75F3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, D2PAK-3

  • Pin Count:

    3

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    480 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB160N75F3 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STB160N75F3 is typically defined by the voltage and current ratings, which are 750V and 16A respectively. However, it's essential to consider the thermal and switching characteristics to ensure the device operates within a safe region.
  • To ensure proper cooling, consider the thermal resistance (Rth) of the device, which is 1.5°C/W for the STB160N75F3. Ensure good thermal contact between the device and the heat sink, and consider using a thermal interface material (TIM) to minimize thermal resistance. Also, ensure good airflow around the heat sink.
  • The recommended gate resistor value for the STB160N75F3 depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10Ω to 100Ω. However, it's essential to consult the application note and perform simulations to determine the optimal gate resistor value for your specific design.
  • Yes, the STB160N75F3 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses. Consult the application note and perform simulations to determine the optimal switching frequency for your specific design.
  • To protect the STB160N75F3 from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a comparator to detect overcurrent conditions and trigger a shutdown or fault protection mechanism.

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STB160N75F3 Overview

Use the download button to access the STB160N75F3 schematic symbol, PCB footprint, and 3D model.
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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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