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STB22N60DM6 - STMicroelectronics

Description: N-channel 600 V, 200 mΩ typ., 15 A, MDmesh DM6 Power MOSFET in a D²PAK package

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STB22N60DM6 - STMicroelectronics PCB footprint - Other - Other - D2PAK_25
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STB22N60DM6 Details

  • Manufacturer Part Number:

    STB22N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.7 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB22N60DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STB22N60DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper cooling, follow the recommended thermal management guidelines in the datasheet, including using a suitable heat sink, thermal interface material, and ensuring good airflow around the device. Additionally, consider the device's thermal resistance (Rth) and maximum junction temperature (Tj) when designing the cooling system.
  • The recommended gate drive voltage and current for the STB22N60DM6 depend on the specific application and switching frequency. As a general guideline, a gate drive voltage of 10-15V and a current of 1-5A is typically sufficient. However, it's essential to consult the datasheet and application notes for more specific guidance.
  • To protect the STB22N60DM6 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry, such as a voltage clamp or a current sense resistor. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) features.
  • During a short-circuit event, the STB22N60DM6 will likely enter a high-current state, which can cause excessive heat and potentially damage the device. To mitigate this, use a suitable short-circuit protection circuitry, such as a current sense resistor and a shutdown circuit, to quickly detect and respond to short-circuit events.

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STB22N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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