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STB24N60M2 - STMicroelectronics

Description: N‑channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a D²PAK, I²PAK, TO-220 and TO-247 packages

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STB24N60M2 - STMicroelectronics PCB footprint - Other - Other - STB24N60M2-4
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STB24N60M2 Details

  • Manufacturer Part Number:

    STB24N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, TO-220, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB24N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STB24N60M2 is 100 kHz, but it can be operated at higher frequencies with proper cooling and thermal management.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and cooling systems. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended gate drive voltage for the STB24N60M2 is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To minimize EMI, use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and implementing EMI filters. Additionally, consider using a gate driver with built-in EMI mitigation features.
  • The maximum allowed voltage transient for the STB24N60M2 is ±50 V, with a maximum duration of 100 ns. Exceeding this limit may damage the device.

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STB24N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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