STB33N60DM6 footprint, schematic symbol and 3D model by STMicroelectronics

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STB33N60DM6 - STMicroelectronics PCB footprint - Other - Other - D²PAK (TO-263) _2022

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Datasheet Download Datasheet
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Part Number STB33N60DM6
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - D²PAK (TO-263) _2022
Released Date Sep 8, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STB33N60DM6 Details

Manufacturer Part Number:
STB33N60DM6
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-263, D2PAK-3/2
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Date Of Intro:
2019-02-01
Manufacturer:
STMicroelectronics
YTEOL:
5
Additional Feature:
BULK: 1000
Avalanche Energy Rating (Eas):
360 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
25 A
Drain-source On Resistance-Max:
0.128 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
3 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
190 W
Pulsed Drain Current-Max (IDM):
80 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STB33N60DM6 Frequently Asked Questions (FAQs)

The maximum operating temperature range for the STB33N60DM6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
The thermal resistance of the STB33N60DM6 can be calculated using the junction-to-case thermal resistance (RthJC) and the case-to-ambient thermal resistance (RthCA). The RthJC is specified in the datasheet as 0.5°C/W, and the RthCA depends on the specific application and heat sink used. A typical value for RthCA is around 10°C/W.
The recommended gate drive voltage for the STB33N60DM6 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide damage.
Yes, the STB33N60DM6 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the switching losses, gate drive requirements, and thermal management to ensure reliable operation.
To protect the STB33N60DM6 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage stress. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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