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STB45N65M5 - STMicroelectronics

Description: N‑channel 650 V, 67 mΩ typ., 35 A MDmesh M5 Power MOSFETs in a D²PAK, TO-220FP and TO-220 packages

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STB45N65M5 - STMicroelectronics - PCB symbol
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PCB Footprints
STB45N65M5 - STMicroelectronics PCB footprint - Other - Other - D²PAK (TO-263)_2026-7
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STB45N65M5 - STMicroelectronics - 3D model - Other - D²PAK (TO-263)_2026-7
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STB45N65M5 Details

  • Manufacturer Part Number:

    STB45N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB45N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STB45N65M5 is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum drain-source voltage (Vds) is 650V, and the maximum drain current (Id) is 45A. Operating the device within these ratings ensures safe operation.
  • To ensure proper cooling, the STB45N65M5 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is approximately 250W. Additionally, ensure good thermal interface material (TIM) is used between the device and heat sink.
  • The recommended gate drive voltage for the STB45N65M5 is between 10V and 15V. This ensures proper turn-on and turn-off of the device. A higher gate drive voltage can reduce switching losses, but may also increase the risk of gate oxide breakdown.
  • To protect the STB45N65M5 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent excessive current. A protection circuit with a fast response time is recommended to prevent damage from voltage and current surges.
  • For optimal performance and minimal electromagnetic interference (EMI), follow these PCB layout guidelines: keep the drain and source pins as close as possible, use a solid ground plane, and minimize the length of the gate trace. Also, ensure the PCB material has a high thermal conductivity to aid in heat dissipation.

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STB45N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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