STB5N80K5 footprint, schematic symbol and 3D model by STMicroelectronics

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STB5N80K5 - STMicroelectronics PCB footprint - Other - Other - STB55NF06LT4-1

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Part Number STB5N80K5
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STB55NF06LT4-1
Released Date Mar 30, 2019
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STB5N80K5 Details

Manufacturer Part Number:
STB5N80K5
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-263, D2PAK-3/2
Manufacturer Package Code:
D2PAK
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
6
Avalanche Energy Rating (Eas):
165 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
800 V
Drain Current-Max (ID):
4 A
Drain-source On Resistance-Max:
1.75 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.3 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
60 W
Pulsed Drain Current-Max (IDM):
16 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STB5N80K5 Frequently Asked Questions (FAQs)

The maximum safe operating area (SOA) of the STB5N80K5 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 100A/500V.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be attached to the device using a thermal interface material with a thermal resistance of less than 0.01°C·cm²/W. Additionally, ensure good airflow around the heat sink.
The recommended gate resistor value for the STB5N80K5 is between 10Ω and 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
Yes, the STB5N80K5 can be used in a parallel configuration to increase the overall current handling capability. However, it is essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
The maximum allowed dv/dt for the STB5N80K5 is not explicitly stated in the datasheet, but it is typically recommended to limit dv/dt to less than 10kV/μs to prevent voltage oscillations and ensure reliable operation.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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