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STB60NF06T4 - STMicroelectronics

Description: MOSFET N-Ch 60 Volt 60 Amp N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET

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STB60NF06T4 - STMicroelectronics PCB footprint - Other - Other - STB60NF06T4-1
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STB60NF06T4 Details

  • Manufacturer Part Number:

    STB60NF06T4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, D2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB60NF06T4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STB60NF06T4 can withstand is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To calculate the power dissipation of the STB60NF06T4, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = Vds * Ids, where Vds is the voltage drop across the device and Ids is the current flowing through it.
  • The recommended PCB layout for the STB60NF06T4 involves keeping the power traces short and wide, using a solid ground plane, and placing the device close to the power source. It's also recommended to use a thermal pad or a heat sink to improve heat dissipation.
  • Yes, the STB60NF06T4 can be used in switching applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) to prevent damage. The device can handle high-frequency switching, but the switching frequency should be limited to avoid overheating.
  • To protect the STB60NF06T4 from overvoltage and overcurrent, you can use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, you can use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.

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STB60NF06T4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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