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STB80NF55-06-1 - STMicroelectronics

Description: MOSFET N-Ch, 55V-0.005ohms 80A

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STB80NF55-06-1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-262 (I2PAK)
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STB80NF55-06-1 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-262 (I2PAK)
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STB80NF55-06-1 Details

  • Manufacturer Part Number:

    STB80NF55-06-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    ROHS COMPLIANT, TO-262, I2PAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    210 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB80NF55-06-1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STB80NF55-06-1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • A recommended PCB layout for minimizing EMI includes using a multi-layer board, placing the device close to the power source, and using a ground plane to reduce radiation.
  • Yes, the STB80NF55-06-1 is suitable for switching regulator applications due to its low RDS(on) and high current capability. However, ensure the device is operated within its specified voltage and current ratings.
  • To protect the device, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and ensure the device is operated within its specified voltage and current ratings.

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STB80NF55-06-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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