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STD10N60M2 - STMicroelectronics

Description: N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a D²PAK, DPAK and TO-220 packages

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STD10N60M2 - STMicroelectronics PCB footprint - Other - Other - STD10N60M2-5
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STD10N60M2 Details

  • Manufacturer Part Number:

    STD10N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.84 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD10N60M2 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD10N60M2 is typically around 100 kHz, but it can be used up to 200 kHz with proper gate drive and layout considerations.
  • To minimize switching losses, ensure the gate drive voltage is between 10-15V, and the gate resistance is as low as possible (typically <10 ohms). Also, use a gate driver with a high current capability (>1A) and a fast rise/fall time (<10ns).
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces (<10mm) and a solid ground plane. Keep the drain and source pins as close as possible, and use a Kelvin connection for the gate pin.
  • Use a voltage clamp or a zener diode to protect the STD10N60M2 from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and then shut down the device or reduce the current limit.
  • The thermal resistance of the STD10N60M2 is typically around 1.5°C/W. Ensure proper thermal management by using a heat sink with a thermal resistance <1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity >5W/m-K.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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