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STD10N60M6 - STMicroelectronics

Description: N-channel 600 V, 520 mΩ typ., 6.4 A MDmesh M6 Power MOSFET in a DPAK package

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STD10N60M6 - STMicroelectronics PCB footprint - Other - Other - DPAK-2022_3
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STD10N60M6 Details

  • Manufacturer Part Number:

    STD10N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6.4 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.88 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    16.6 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD10N60M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STD10N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal interface material to reduce the thermal resistance between the device and the ambient environment. Also, ensure good airflow and avoid blocking the heat sink or device with other components.
  • The recommended gate drive voltage for the STD10N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). Consult the datasheet and application notes for more information.
  • Yes, the STD10N60M6 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Consult the datasheet and application notes for guidance on high-frequency design considerations.
  • To protect the STD10N60M6 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. In the circuit design, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to prevent voltage transients from damaging the device.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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