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STD10NF30 - STMicroelectronics

Description: Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY Power MOSFET in a DPAK package

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STD10NF30 - STMicroelectronics - PCB symbol
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STD10NF30 - STMicroelectronics PCB footprint - Other - Other - STD10NF30-1
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STD10NF30 - STMicroelectronics - 3D model - Other - STD10NF30-1
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STD10NF30 Details

  • Manufacturer Part Number:

    STD10NF30

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    175 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.33 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    103 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD10NF30 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the STD10NF30 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • The power dissipation of the STD10NF30 can be calculated using the formula: Pd = Vds x Ids, where Vds is the drain-source voltage and Ids is the drain-source current. You can also use the thermal resistance (Rth) and the maximum junction temperature to calculate the power dissipation.
  • The recommended gate resistor value for the STD10NF30 is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase the switching time.
  • Yes, the STD10NF30 is suitable for high-frequency switching applications up to 100 kHz. However, you need to ensure that the device is properly cooled and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • You can protect the STD10NF30 from overvoltage and overcurrent by using a voltage regulator, a current limiter, and a fuse in your circuit design. Additionally, you can use a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) to prevent damage to the device.

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STD10NF30 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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