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STD11N65M5 - STMicroelectronics

Description: N-channel 650 V, 430 mΩ typ., 9 A MDmesh™ M5 Power MOSFETs in a D²PAK, DPAK, TO-220FP and TO-220 packages

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STD11N65M5 - STMicroelectronics PCB footprint - Other - Other - STD11N65M5-2
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STD11N65M5 Details

  • Manufacturer Part Number:

    STD11N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.48 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD11N65M5 Frequently Asked Questions (FAQs)

  • The STD11N65M5 is a power MOSFET, not a digital device, so it does not have a maximum operating frequency. However, it can switch at high frequencies (up to several hundred kHz) depending on the application and gate driver circuitry.
  • To ensure the STD11N65M5 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuitry should be able to provide sufficient current to charge the gate capacitance quickly.
  • The maximum safe operating area (SOA) of the STD11N65M5 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. It's recommended to consult with STMicroelectronics' application notes or contact their support team for more information.
  • The STD11N65M5 is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. It's essential to ensure proper thermal management and consider derating the device's specifications at elevated temperatures.
  • To protect the STD11N65M5 from ESD, handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static package, and avoid touching the device's pins or leads.

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STD11N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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