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STD11NM60ND - STMicroelectronics

Description: N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a DPAK package

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STD11NM60ND - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252) type C3
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STD11NM60ND - STMicroelectronics  - 3D model - Other - DPAK (TO-252) type C3
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STD11NM60ND Details

  • Manufacturer Part Number:

    STD11NM60ND

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Package Description:

    ROHS COMPLIANT, DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD11NM60ND Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD11NM60ND is 100 kHz, but it can be operated at higher frequencies with reduced voltage ratings.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 60V. Additionally, a gate resistor (Rg) should be used to limit the gate current.
  • The maximum power dissipation of the STD11NM60ND is 110W, but this can be increased with proper heat sinking and thermal management.
  • Yes, the STD11NM60ND is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the maximum junction temperature (Tj) should not exceed 175°C.
  • To protect the STD11NM60ND from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the device is stored in an anti-static bag or container.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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