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STD13N50DM2AG - STMicroelectronics

Description: Automotive-grade N-channel 500 V, 320 mOhm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package

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STD13N50DM2AG - STMicroelectronics PCB footprint - Other - Other - STD13N50DM2AG-1
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STD13N50DM2AG Details

  • Manufacturer Part Number:

    STD13N50DM2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    BULK: 2500

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.5 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD13N50DM2AG Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STD13N50DM2AG can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, the STD13N50DM2AG should be mounted on a heat sink with a thermal resistance of less than 1°C/W. Additionally, the device should be placed in a well-ventilated area to prevent overheating.
  • The recommended gate drive voltage for the STD13N50DM2AG is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the STD13N50DM2AG is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance may degrade at higher frequencies, and additional considerations such as gate drive voltage and PCB layout may be necessary.
  • To protect the STD13N50DM2AG from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector on the drain-source voltage, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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