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STD18N55M5 - STMicroelectronics

Description: N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a DPAK package , 1260 pF , 150°C

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STD18N55M5 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_2026-1.15
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STD18N55M5 - STMicroelectronics  - 3D model - Other - DPAK (TO-252)_2026-1.15
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STD18N55M5 Details

  • Manufacturer Part Number:

    STD18N55M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    550 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD18N55M5 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STD18N55M5 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 55V. Additionally, the gate current (Ig) should be limited to 100 mA.
  • The maximum power dissipation of the STD18N55M5 is 150 W, but this can be increased with proper heat sinking and thermal management.
  • To protect the STD18N55M5 from overvoltage and overcurrent, use a voltage regulator to limit the voltage to 55V or less, and add a current limiter or fuse to prevent excessive current.
  • Yes, the STD18N55M5 can be used in high-temperature applications up to 150°C, but the maximum power dissipation and performance may be reduced at higher temperatures.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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