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STD1HN60K3 - STMicroelectronics

Description: N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages

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STD1HN60K3 - STMicroelectronics - PCB symbol
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STD1HN60K3 - STMicroelectronics PCB footprint - Other - Other - STD1HN60K3-1
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STD1HN60K3 Details

  • Manufacturer Part Number:

    STD1HN60K3

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    0.76 A

  • Drain-source On Resistance-Max:

    8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    4.8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD1HN60K3 Frequently Asked Questions (FAQs)

  • The STD1HN60K3 is a high-voltage N-channel power MOSFET, and its maximum operating frequency is typically limited by the application's switching requirements. However, the device is suitable for high-frequency switching applications up to several hundred kHz.
  • To ensure SOA compliance, follow the guidelines in the datasheet for voltage and current ratings, and ensure that the device is operated within the recommended temperature range. Additionally, consider the application's specific requirements and consult with STMicroelectronics' application notes and technical support if necessary.
  • The recommended gate drive voltage for the STD1HN60K3 is between 10V and 15V, depending on the application's specific requirements. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • To minimize power losses in the STD1HN60K3, ensure that the device is operated within its recommended voltage and current ratings, and optimize the gate drive voltage and switching frequency for the application. Additionally, consider using a low-loss gate driver and optimizing the PCB layout to minimize parasitic inductances and capacitances.
  • The STD1HN60K3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the device's performance and reliability may degrade at elevated temperatures, so ensure that the application's specific requirements are met and consult with STMicroelectronics' technical support if necessary.

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STD1HN60K3 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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