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STD2NK90Z-1 - STMicroelectronics

Description: N-channel 900 V, 4.7 Ω typ., 2.1 A SuperMESH Power MOSFET in an IPAK package

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PCB Footprints
STD2NK90Z-1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK (TO-251) type C
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STD2NK90Z-1 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - IPAK (TO-251) type C
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STD2NK90Z-1 Details

  • Manufacturer Part Number:

    STD2NK90Z-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-251AA

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    2.1 A

  • Drain-source On Resistance-Max:

    6.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    8.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD2NK90Z-1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STD2NK90Z-1 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing scheme is Vgs = 5V, Vds = 10V, and Id = 10mA.
  • To minimize thermal resistance, use a thermal pad with a minimum size of 2mm x 2mm, and ensure the PCB has a solid copper ground plane. Also, use thermal vias to connect the thermal pad to the ground plane.
  • Yes, the STD2NK90Z-1 is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and electromagnetic interference (EMI).
  • To protect the STD2NK90Z-1 from ESD, use an ESD protection device, such as a TVS diode, in parallel with the device. Also, ensure proper handling and storage procedures to prevent ESD damage.

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STD2NK90Z-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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