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STD30NF06LT4 - STMicroelectronics

Description: N-channel 60 V, 0.022 Ω typ., 35 A STripFET™ II Power MOSFET in a DPAK package

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PCB Footprints
STD30NF06LT4 - STMicroelectronics PCB footprint - Other - Other - DPAK/2022
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STD30NF06LT4 - STMicroelectronics  - 3D model - Other - DPAK/2022
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STD30NF06LT4 Details

  • Manufacturer Part Number:

    STD30NF06LT4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    TO-252, DPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    70 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD30NF06LT4 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the STD30NF06LT4 can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The recommended gate resistor value for the STD30NF06LT4 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the STD30NF06LT4 is qualified for automotive and industrial applications, and is suitable for high-reliability applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure reliable operation.
  • To protect the STD30NF06LT4 from ESD, it's essential to handle the device with an anti-static wrist strap or mat, and to ensure that the PCB and components are properly grounded. Additionally, ESD protection devices such as TVS diodes can be used to protect the device.

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STD30NF06LT4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STD30NF06L STMicroelectronics

Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA