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STD35N3LH5 - STMicroelectronics

Description: N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFET

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STD35N3LH5 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)-2022_ 1
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STD35N3LH5 Details

  • Manufacturer Part Number:

    STD35N3LH5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD35N3LH5 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for STD35N3LH5 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes connecting the gate to a voltage source (e.g., 5V) through a suitable resistor (e.g., 1 kΩ) and ensuring the drain-source voltage is within the recommended range (e.g., 10V to 30V).
  • For optimal thermal management, use a PCB with a solid copper ground plane, and ensure good thermal conductivity between the device and the PCB. Use thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the device is operated within the recommended maximum ratings.
  • A suitable gate drive circuitry for STD35N3LH5 typically includes a gate driver IC (e.g., STP16NF06) or a discrete transistor (e.g., 2N3904) with a suitable resistor and capacitor to ensure proper gate-source voltage and current.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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