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STD4NK100Z - STMicroelectronics

Description: Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

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STD4NK100Z - STMicroelectronics PCB footprint - Other - Other - STD4NK100Z-1
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STD4NK100Z - STMicroelectronics  - 3D model - Other - STD4NK100Z-1
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STD4NK100Z Details

  • Manufacturer Part Number:

    STD4NK100Z

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    6.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    8.8 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD4NK100Z Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STD4NK100Z is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to reduce oscillations and ensure stable operation.
  • The recommended gate drive voltage for the STD4NK100Z is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • To protect the STD4NK100Z from overvoltage and overcurrent, use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • The maximum allowable power dissipation for the STD4NK100Z is 150 W, but this value can be derated based on the operating temperature and other factors.

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STD4NK100Z Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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