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STD4NK80Z-1 - STMicroelectronics

Description: N-channel 800 V, 2.7 Ω typ., 3 A SuperMESH Power MOSFET in an IPAK package

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STD4NK80Z-1 - STMicroelectronics PCB footprint - Other - Other -  IPAK (TO-251) type E
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STD4NK80Z-1 - STMicroelectronics  - 3D model - Other -  IPAK (TO-251) type E
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STD4NK80Z-1 Details

  • Manufacturer Part Number:

    STD4NK80Z-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-251AA

  • Package Description:

    TO-251, IPAK-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6.2

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STD4NK80Z-1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STD4NK80Z-1 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 10V to 15V.
  • The maximum current rating for the STD4NK80Z-1 is 4A.
  • To protect the STD4NK80Z-1 from overvoltage and overcurrent, use a voltage regulator and a current limiter in the circuit design. Additionally, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits.
  • For optimal performance, use a multi-layer PCB with a solid ground plane, and keep the power traces short and wide. Place the STD4NK80Z-1 close to the power source and use a decoupling capacitor to reduce noise.

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STD4NK80Z-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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