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STF18N60M6 - STMicroelectronics

Description: N-channel 600 V, 230 mΩ typ., 13 A, MDmesh M6 Power MOSFET in a TO-220FP package

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STF18N60M6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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3D Models
STF18N60M6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF18N60M6 Details

  • Manufacturer Part Number:

    STF18N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STF18N60M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF18N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with STMicroelectronics' application notes or contact their support team for more information.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tjmax). Use a heat sink with a sufficient thermal conductivity and surface area to dissipate heat effectively. Also, ensure good thermal contact between the device and heat sink using thermal interface materials. Finally, consider the airflow and ambient temperature in your design to ensure the device operates within its specified temperature range.
  • The recommended gate drive voltage for the STF18N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress. Consult the datasheet and application notes for more information on gate drive voltage selection.
  • Yes, the STF18N60M6 can be used in a parallel configuration to increase current handling, but it requires careful consideration of the device's characteristics and layout. Ensure that the devices are matched in terms of their electrical and thermal characteristics, and that the layout is designed to minimize current imbalance and thermal gradients. Consult STMicroelectronics' application notes and support team for more information on parallel configuration design.
  • The STF18N60M6 has an integrated ESD protection diode, but it's still important to follow proper ESD handling and protection procedures during manufacturing, assembly, and testing. Ensure that your design includes ESD protection devices and follows recommended ESD handling practices to prevent damage to the device.

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STF18N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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