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STF18N65M5 - STMicroelectronics

Description: STF18N65M5 N-Channel MOSFET, 15 A, 710 V MDmesh M5, 3-Pin TO-220FP STMicroelectronics

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STF18N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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STF18N65M5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF18N65M5 Details

  • Manufacturer Part Number:

    STF18N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF18N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF18N65M5 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A safe operating area can be estimated to be around 10-15A for 10ms pulses, but this should be verified through simulation and testing.
  • To ensure proper cooling, consider the following: 1) Use a heat sink with a thermal resistance of around 1-2°C/W, 2) Apply a thin layer of thermal interface material (TIM) between the device and heat sink, 3) Ensure good airflow around the heat sink, and 4) Consider using a fan or other active cooling method for high-power applications.
  • For optimal performance and thermal management, follow these PCB layout guidelines: 1) Use a 2-4 layer PCB with a solid ground plane, 2) Place the device near the edge of the board to facilitate heat dissipation, 3) Use wide, short traces for power connections, and 4) Minimize the distance between the device and decoupling capacitors.
  • To protect the STF18N65M5, consider the following: 1) Use a voltage regulator or overvoltage protection (OVP) circuit to limit the input voltage, 2) Implement overcurrent protection (OCP) using a current sense resistor and a comparator, and 3) Add a thermal protection circuit to prevent overheating.
  • A recommended gate drive circuit for the STF18N65M5 includes a gate driver IC (e.g., TC4420) with a pull-up resistor (around 1kΩ) and a pull-down resistor (around 10kΩ) to ensure proper gate voltage and minimize ringing.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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