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STF22N60M6 - STMicroelectronics

Description: N-channel 600 V, 196 mΩ typ., 15 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

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STF22N60M6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_(Height=4.6mm)
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3D Models
STF22N60M6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP_(Height=4.6mm)
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STF22N60M6 Details

  • Manufacturer Part Number:

    STF22N60M6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

STF22N60M6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF22N60M6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with STMicroelectronics' application notes or contact their support team for more information.
  • To ensure proper cooling, consider the device's thermal resistance (Rth(j-a)) and maximum junction temperature (Tj(max)). Use a heat sink with a sufficient thermal conductivity and surface area to dissipate heat effectively. Also, ensure good thermal contact between the device and heat sink using thermal interface materials (TIMs) and follow proper mounting and assembly procedures.
  • The recommended gate drive voltage for the STF22N60M6 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations. Consult the datasheet and application notes for more information on gate drive requirements.
  • Yes, the STF22N60M6 can be used in a parallel configuration to increase current handling, but it requires careful consideration of the devices' thermal and electrical characteristics. Ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the increased current and voltage stresses. Consult STMicroelectronics' application notes and support team for more information on parallel configuration design.
  • The STF22N60M6 has an integrated ESD protection diode, but it's still important to follow proper ESD handling and protection procedures during assembly and testing. Ensure that the device is handled and stored in an ESD-safe environment, and consider adding external ESD protection devices if necessary, depending on the specific application and environment.

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STF22N60M6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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