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STF24N60M2 - STMicroelectronics

Description: STMicroelectronics STF24N60M2 N-channel MOSFET Transistor, 18 A, 650 V, 3-Pin TO-220FP

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STF24N60M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP--
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STF24N60M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP--
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STF24N60M2 Details

  • Manufacturer Part Number:

    STF24N60M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.2 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF24N60M2 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF24N60M2 is typically defined by the manufacturer as the area where the device can operate safely without damage. For the STF24N60M2, the SOA is typically defined as Vds = 30V, Id = 24A, and Pd = 120W. However, it's recommended to consult the datasheet and application notes for specific guidance on SOA.
  • To ensure proper cooling of the STF24N60M2, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the STF24N60M2 depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω to 100Ω. However, it's recommended to consult the datasheet and application notes for specific guidance on gate resistor selection.
  • Yes, the STF24N60M2 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application is designed to minimize electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues.
  • To protect the STF24N60M2 from overvoltage and overcurrent, it's recommended to use a combination of voltage and current sensing circuits, along with protective devices such as zener diodes, varistors, and fuses. Additionally, ensure that the device is operated within its recommended operating conditions and that the application is designed with adequate safety margins.

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STF24N60M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image STF24NM60N STMicroelectronics

Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB