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STF28N65M2 - STMicroelectronics

Description: N‑channel 650 V, 150 mΩ typ., 20 A MDmesh M2 Power MOSFET in a D²PAK, TO-220FP, TO-220 and TO-247 packages

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STF28N65M2 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2022
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STF28N65M2 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP_2022
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STF28N65M2 Details

  • Manufacturer Part Number:

    STF28N65M2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    760 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF28N65M2 Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the STF28N65M2 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps to prevent unwanted turn-on and ensures stable operation.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections as close as possible to the device, and use a solid ground plane to reduce inductance.
  • Use a voltage regulator or a zener diode to limit the voltage across the device. Add a current-sensing resistor and a fuse or a current-limiting circuit to prevent overcurrent conditions. Also, consider adding a thermal protection circuit to prevent overheating.
  • Use a heat sink with a thermal interface material (e.g., thermal paste or thermal tape) to improve heat transfer. Ensure good airflow around the device, and consider using a fan or a heat sink with a built-in fan for high-power applications.

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STF28N65M2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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