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STF33N60DM6 - STMicroelectronics

Description: N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package

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STF33N60DM6 - STMicroelectronics - PCB symbol
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STF33N60DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP_2022
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STF33N60DM6 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-220FP_2022
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STF33N60DM6 Details

  • Manufacturer Part Number:

    STF33N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    360 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.128 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF33N60DM6 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STF33N60DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink or thermal pad to reduce the thermal resistance, and ensure good airflow around the device. You can also use thermal simulation tools to estimate the device's temperature and optimize your design accordingly.
  • The recommended gate drive voltage for the STF33N60DM6 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure the gate drive voltage is within the specified range to avoid damage to the device.
  • Yes, the STF33N60DM6 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's crucial to consider the device's switching losses, thermal performance, and parasitic inductances when designing the circuit.
  • The internal diode of the STF33N60DM6 can be handled by using a freewheeling diode or a snubber circuit to reduce voltage spikes and ringing during switching. You can also use a gate driver with an integrated diode emulation feature to simplify the design.

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STF33N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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