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STF3N80K5 - STMicroelectronics

Description: N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh K5 Power MOSFET in a TO-220FP package

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STF3N80K5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP(H=4.6mm)
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STF3N80K5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP(H=4.6mm)
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STF3N80K5 Details

  • Manufacturer Part Number:

    STF3N80K5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    3.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF3N80K5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF3N80K5 is typically defined by the device's voltage and current ratings. For the STF3N80K5, the maximum voltage rating is 800V and the maximum current rating is 3A. Operating the device within these ratings ensures safe and reliable operation.
  • To ensure proper cooling, the STF3N80K5 should be mounted on a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is approximately 100W. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
  • The recommended gate drive voltage for the STF3N80K5 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI). A lower gate drive voltage can reduce power consumption and EMI, but may compromise switching performance.
  • To protect the STF3N80K5 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions. Implementing overvoltage and overcurrent protection can help prevent device damage and ensure reliable operation.
  • For optimal performance and reliability, the PCB layout for the STF3N80K5 should minimize parasitic inductance and capacitance. Use a symmetrical layout with short, wide traces for the drain, source, and gate connections. Keep the gate drive circuitry close to the device to minimize noise and ensure reliable switching. Use a solid ground plane to reduce electromagnetic interference (EMI).

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STF3N80K5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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