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STF45N65M5 - STMicroelectronics

Description: N‑channel 650 V, 67 mΩ typ., 35 A MDmesh M5 Power MOSFETs in a D²PAK, TO-220FP and TO-220 packages

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STF45N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220FP-2
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STF45N65M5 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-220FP-2
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STF45N65M5 Details

  • Manufacturer Part Number:

    STF45N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STF45N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the STF45N65M5 is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum drain-source voltage (Vds) is 650V, and the maximum drain current (Id) is 45A. Operating the device within these limits ensures safe and reliable operation.
  • Proper thermal management is crucial for the STF45N65M5. Ensure good heat dissipation by using a suitable heat sink, applying a thermal interface material (TIM) between the device and heat sink, and maintaining good airflow around the device. The maximum junction temperature (Tj) is 175°C, so ensure the device operates within this limit.
  • The recommended gate drive voltage for the STF45N65M5 is between 10V and 15V. This ensures proper switching and minimizes power losses. However, the exact gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the STF45N65M5 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of delivering the required current and voltage. Additionally, consider the device's power losses and thermal management when operating at high frequencies.
  • To protect the STF45N65M5 from overvoltage and overcurrent conditions, consider using voltage and current sensing circuits, along with protection devices such as varistors, TVS diodes, or fuses. Additionally, implement overcurrent protection (OCP) and overvoltage protection (OVP) circuits to prevent damage to the device.

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STF45N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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