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STFW38N65M5 - STMicroelectronics

Description: N-channel 650 V, 73 mΩ typ., 30 A MDmesh M5 Power MOSFETs in a TO-220FP and TO-3PF packages

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STFW38N65M5 - STMicroelectronics - PCB symbol
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STFW38N65M5 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PF-ren1
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STFW38N65M5 - STMicroelectronics - 3D model - Transistor Outline, Vertical - TO-3PF-ren1
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STFW38N65M5 Details

  • Manufacturer Part Number:

    STFW38N65M5

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, TO-3PF, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    660 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STFW38N65M5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the STFW38N65M5 is not explicitly stated in the datasheet, but it can be determined by consulting the application notes and thermal design guidelines provided by STMicroelectronics. Generally, the SOA is limited by the maximum junction temperature, which is 175°C for this device.
  • To ensure proper cooling, follow the thermal design guidelines provided by STMicroelectronics, including the recommended PCB layout, thermal pad design, and heat sink selection. Additionally, consider the maximum power dissipation and junction temperature ratings, and ensure that the device is operated within the recommended operating conditions.
  • The recommended gate drive voltage for the STFW38N65M5 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and current requirements.
  • Yes, the STFW38N65M5 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, including the rise and fall times, and ensure that the design meets the recommended operating conditions and layout guidelines to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • To protect the STFW38N65M5 from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. These can include voltage clamping devices, such as zener diodes or transient voltage suppressors (TVS), and current sensing resistors or fuses. Additionally, ensure that the device is operated within the recommended operating conditions and follow the guidelines provided in the datasheet and application notes.

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STFW38N65M5 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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