STH30N65DM6-7AG footprint, schematic symbol and 3D model by STMicroelectronics

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STH30N65DM6-7AG - STMicroelectronics PCB footprint - Other - Other - STH30N65DM6-7AG

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Datasheet Download Datasheet
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Part Number STH30N65DM6-7AG
Manufacturer STMicroelectronics
Pin Count 8
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STH30N65DM6-7AG
Released Date Aug 25, 2021
Last Modified Date Jan 8, 2026 2:31 PM UTC
Pinout / Pin List Click Here (Member Only)

STH30N65DM6-7AG Details

Manufacturer Part Number:
STH30N65DM6-7AG
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
4
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
28 A
Drain-source On Resistance-Max:
0.115 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
1.5 pF
JESD-30 Code:
R-PSSO-G7
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
7
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
245
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
223 W
Pulsed Drain Current-Max (IDM):
112 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STH30N65DM6-7AG Frequently Asked Questions (FAQs)

The maximum operating temperature range for the STH30N65DM6-7AG is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
To ensure safe operating area (SOA) for the STH30N65DM6-7AG, you should consider the maximum voltage, current, and power dissipation ratings specified in the datasheet. Additionally, you should also consider the thermal management and heat dissipation capabilities of your design to prevent overheating.
The recommended gate drive voltage for the STH30N65DM6-7AG is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.
To handle ESD protection for the STH30N65DM6-7AG, you should follow proper handling and storage procedures to prevent electrostatic discharge. Additionally, you can use ESD protection devices such as TVS diodes or ESD protection ICs in your design to protect the MOSFET from ESD events.
The maximum allowed voltage for the gate-source voltage (Vgs) of the STH30N65DM6-7AG is ±20V, as specified in the datasheet. Exceeding this voltage may damage the MOSFET.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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