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STH3N150-2 - STMicroelectronics

Description: N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

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STH3N150-2 - STMicroelectronics PCB footprint - Other - Other - H2PAK_2020
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STH3N150-2 - STMicroelectronics  - 3D model - Other - H2PAK_2020
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STH3N150-2 Details

  • Manufacturer Part Number:

    STH3N150-2

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, H2PAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1500 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STH3N150-2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STH3N150-2 is -40°C to 150°C.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. Ensure the device is mounted on a suitable heat sink, and consider using thermal interface materials to minimize thermal resistance.
  • The recommended gate drive voltage for the STH3N150-2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. Consider using a voltage regulator and current sense resistors to monitor and limit the device's operating conditions.
  • Follow STMicroelectronics' recommended PCB layout guidelines, ensuring a low-inductance layout, and consider using a 4-layer PCB with a dedicated power plane and ground plane. Keep the device's pins as close as possible to the PCB's thermal vias.

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STH3N150-2 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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